, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tip33, TIP33A, tip33b, tip33c npn silicon power transistors ? designed for complementary use with the tip34 series ? 80 w at 25"c case temperature ? 10 a continuous collector current ? 15 a peak collector current ? customer-specified selections available sot-93 package (top view) o pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-bass voltage (ie - 0) collector-emitter voltage (ib - 0) tip33 TIP33A tip33s t1p33c tip33 TIP33A tip33b t1p33c emitter-base voltage continuous collector current peak collector current (eee note 1) continuous base current continuous device dissipation at (or below) 25'c case lamperature (see note 2) continuous device dissipation at (or below) 25c free air temperature (see note 3) undamped inductive load energy (see note 4) operating junction temperature range storage temperature range lead temperature 3.2 mm from case lor 10 seconds symbol vcbo vceo vebo ic icm ib pn. pw wlic* tl t110 tl value 30 too 120 140 40 60 80 100 5 to 15 3 ao 3.5 62.5 4510 +150 -6510+150 250 unit v v v a a a w w mj c ?e "c motes: 1. tnis value applies lor !? s 0.3ms, duty oydes 10%. 2. derate linearly to 150*c case temperature at the rate ol 0.64 w/c. 3. derate linearly to 150flc free air temperature attheraleof ssmwrc. 4. thib rating is based on me capability ol the transistor to operate safely in a circuit of: l - 20 mh, latent" -4 a- ^be ? too n, . nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tjp33, TIP33A, t1p33b, tip33c npn silicon power transistors electrical characteristics at 25c case temperature parameter collector-emitter (br)ceo breakdown voltage collector-emitlor ces cut-off current collector cut-off 'ceo current emitter cut-off 'ebo current forward currant fe transfer ratio collector-emitter vce(..t) mlurauonvq|laoe base-emitter 8e voltage small signal forward current transfer ratio small signal forward current transfer ratio test conditions tip33 lc- 30ma la.o 'tikssb (see note 6} tip33c vce = 80 v vbe = 0 tip33 vce ? 100v vbe = o TIP33A vce -120v vbe-o tip33b y a: 1 40 v vtap " 0 tip33c vce a 30^ 'b- tip33/33a vce- 60v ib = 0 tip33b/33c veb? sv ic-o vfp = 4 v ir ? 1 a (see notes 5 and 6) 1. 1 ma !c-ioa ?-?!??? 8) c (see notes s and 6) vce, 10v ic = 0.5a f.lhhz vce = 10 v i0 = 0.5 a f - 1 mhz min 40 60 80 100 40 20 20 3 typ max 0.4 0.4 0.4 0.4 0.7 0.7 1 100 1 4 1.6 3 unit v ma ma ma v v notes: 5. these parameters must be measured using pulse techniques. lp - 300 us. duty cycle s 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter rojc junction to case thermal resistance h^ja junction to free air thermal resistance min typ max 1.sa 35.7 unit "c/w ?c/w reslstlve-load-switching characteristics at 25c case temperature parameter ton turn-on lima ton tum-oh timo test conditions * ic-sa i8(m) = o.ea i^,,,. -o.e a vbeio(t) - -* v rl - 5 1 tn ? 20 us, dc s 2% min typ 0.6 1 max unit |? ms voltage and current value* shown are nominal; exact values vary slightly with transistor parameter*.
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